inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB677 description high dc current gain- : h fe = 2000(min)@ i c = -1 a collector-emitter breakdown voltage- : v (br)ceo = -40v(min) low collector-emitter saturation voltage- : v ce(sat) = -1.5v(max)@ i c = - 2a applications switching applications . hammer drive, pulse motor drive applications. power amplifier applications. absolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current-continuous -3 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB677 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -25ma, i b = 0 -40 v v ce( sat ) collector-emitter saturation voltage i c = -2a, i b = -4ma b -1.5 v v be( sat ) ) base-emitter saturation voltage i c = -2a, i b = -4ma b -2.0 v i cbo collector cutoff current v cb = -60v, i e = 0 -20 a i ebo emitter cutoff current v eb = -5v; i c = 0 -2.5 ma h fe-1 dc current gain i c = -1a; v ce = -2v 2000 h fe-2 dc current gain i c = -3a; v ce = -2v 1000 t on turn-on time 0.30 s t stg storage time 0.60 s t f fall time v cc = -30v; i b1 = -i b2 = -6ma, r l = 10 0.25 s isc website www.iscsemi.cn
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